Arindom G.

Arindom Goswami is a skilled analytical chemist and Ph.D. graduate student with expertise in semiconductor materials characterization, analytical chemistry laboratory methods and design of experiments, microscope imaging techniques, and thin-film analysis. He has a unique combination of skills in wet chemistry, cleanroom processing, semiconductor processes and plasma chemistry, materials characterization and metrology development that have enabled him to play key roles in numerous industry collaborations in the fields of semiconductor processing, product development and packaging.

Arindom's research primarily focuses on exploring copper bimetallic corrosion behavior and developing a metrology approach using multiple internal reflection infrared spectroscopy (MIR-IR) to investigate chemical bonding modification across fluorocarbon etch residues and low-k dielectric interface after plasma etching, ashing, UV curing, and post-etch cleaning. He is also a self-motivated hands-on team player proficient in communicating and engaging in a team environment, developing and driving productivity improvements. Additionally, he has delivered talks at international conferences, successfully presented results to funding agencies, initiated collaborations with outside agencies, and mentored and guided many undergraduate and junior graduate students.

Arindom Goswami earned a Ph.D. in Analytical Chemistry and a Master of Science in Physical Chemistry from the University of North Texas, a Master’s Degree in Physical Chemistry from Delhi University, and a Bachelor’s Degree in Chemistry (major), minors in Physics, Mathematics, English, and Environmental Studies from Jorhat Science College. He also studied Materials and Structures for Hypersonic Flight at the University of California, Santa Barbara.