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Nihaar Mahatme

Technology Strategy Lead at NXP acquires Freescale Semiconductor
Austin, Texas, United States
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Nihaar Mahatme

Technology Strategy Lead at NXP acquires Freescale Semiconductor
Austin, Texas, United States
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Nihaar Mahatme is a highly accomplished engineer with an impressive academic background in Electrical and Electronics Engineering. He has completed his Bachelor of Engineering from the University of Mumbai, and pursued his Masters and Doctor of Philosophy in Electrical Engineering from Vanderbilt University. He is a distinguished individual who has secured significant academic achievements, with a GPA of 3.97/4.0 in both his Masters and Doctoral programs.

His expertise lies in various areas of electrical engineering, and he has contributed significantly in this field, working with various organizations. He started his career as a Senior Design Project Apprentice with Bhabha Atomic Research Centre, moved on to contribute as a Graduate Research Assistant at Vanderbilt University, and then shaped his career with Freescale Semiconductor (now NXP), where he worked as an SRAM Memory Design Intern followed by SRAM R&D Engineer, and ultimately, as the Technology Strategy Lead.

Nihaar has also interned with multiple companies and institutions including IMEC, Taiwan Semiconductor Manufacturing Company, and Cisco Systems. He has served as a Visiting Scholar at the University of Saskatchewan and has published several research papers in top-tier IEEE conferences and journals. With his rich experience, he has acquired a deep understanding of electrical engineering and has been part of critical technological advances in this field.

In summary, Nihaar Mahatme is a highly successful and skilled engineer with a Ph.D. in Electrical and Electronics Engineering. He has worked with top-tier companies in the industry and has built an impressive portfolio of research papers. He brings immense experience and knowledge to the field of electrical engineering.

This public profile is provided courtesy of Clay. All information found here is in the public domain.
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